TY - JOUR
T1 - Tunnel magnetoresistance effect in magnetic tunnel junctions using a Co2MnSi(110) electrode
AU - Hattori, Masashi
AU - Sakuraba, Yuya
AU - Oogane, Mikihiko
AU - Ando, Yasuo
AU - Miyazaki, Terunobu
PY - 2008/2
Y1 - 2008/2
N2 - Magnetic tunnel junctions (MTJs) with half-metallic electrodes are expected to show a large tunnel magnetoresistance (TMR) ratio, according to Julliere's model. A Co2MnSi Heusler alloy is theoretically expected to possess a half-metallic electronic state. Experimentally, at low temperature, Co 2MnSi(100)/Al-oxide/CoFe junctions exhibited a large TMR ratio. We fabricated MTJs with high-quality (110)-oriented Co2MnSi electrodes and investigated the TMR effects. We obtained a TMR ratio of about 40% at room temperature and 120% at 2 K, respectively. However, we observed degradation of the energy gap of Co2MnSi in the minority spin band from the conductance-voltage characteristics. We infer that the interface of Co 2MnSi(110) possesses no half-metallic property.
AB - Magnetic tunnel junctions (MTJs) with half-metallic electrodes are expected to show a large tunnel magnetoresistance (TMR) ratio, according to Julliere's model. A Co2MnSi Heusler alloy is theoretically expected to possess a half-metallic electronic state. Experimentally, at low temperature, Co 2MnSi(100)/Al-oxide/CoFe junctions exhibited a large TMR ratio. We fabricated MTJs with high-quality (110)-oriented Co2MnSi electrodes and investigated the TMR effects. We obtained a TMR ratio of about 40% at room temperature and 120% at 2 K, respectively. However, we observed degradation of the energy gap of Co2MnSi in the minority spin band from the conductance-voltage characteristics. We infer that the interface of Co 2MnSi(110) possesses no half-metallic property.
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U2 - 10.1143/APEX.1.021301
DO - 10.1143/APEX.1.021301
M3 - Article
AN - SCOPUS:57049101505
VL - 1
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 2
M1 - 021301
ER -