Tunnel magnetoresistance effect in magnetic tunnel junctions using a Co2MnSi(110) electrode

Masashi Hattori, Yuya Sakuraba, Mikihiko Oogane, Yasuo Ando, Terunobu Miyazaki

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8 Citations (Scopus)


Magnetic tunnel junctions (MTJs) with half-metallic electrodes are expected to show a large tunnel magnetoresistance (TMR) ratio, according to Julliere's model. A Co2MnSi Heusler alloy is theoretically expected to possess a half-metallic electronic state. Experimentally, at low temperature, Co 2MnSi(100)/Al-oxide/CoFe junctions exhibited a large TMR ratio. We fabricated MTJs with high-quality (110)-oriented Co2MnSi electrodes and investigated the TMR effects. We obtained a TMR ratio of about 40% at room temperature and 120% at 2 K, respectively. However, we observed degradation of the energy gap of Co2MnSi in the minority spin band from the conductance-voltage characteristics. We infer that the interface of Co 2MnSi(110) possesses no half-metallic property.

Original languageEnglish
Article number021301
JournalApplied Physics Express
Issue number2
Publication statusPublished - 2008 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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