Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes

Yusuke Ohdaira; Mikihiko Oogane; Yasuo Ando

doi:10.1063/1.3072023

Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes

Yusuke Ohdaira, Mikihiko Oogane, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Double magnetic tunnel junctions (DMTJs) using half-metallic [formula omitted] Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the [formula omitted] electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance.

Original language	English
Pages (from-to)	2152
Number of pages	1
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3072023
Publication status	Published - 2009 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Double magnetic tunnel junctions (DMTJs) using half-metallic [formula omitted] Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the [formula omitted] electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance.",

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AU - Ohdaira, Yusuke

AU - Oogane, Mikihiko

AU - Ando, Yasuo

PY - 2009/4/1

Y1 - 2009/4/1

N2 - Double magnetic tunnel junctions (DMTJs) using half-metallic [formula omitted] Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the [formula omitted] electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance.

AB - Double magnetic tunnel junctions (DMTJs) using half-metallic [formula omitted] Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the [formula omitted] electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance.

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Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes

Abstract

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