Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes

Yusuke Ohdaira, Mikihiko Oogane, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Double magnetic tunnel junctions (DMTJs) using half-metallic [formula omitted] Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the [formula omitted] electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance.

Original languageEnglish
Pages (from-to)2152
Number of pages1
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes'. Together they form a unique fingerprint.

Cite this