Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Ga+ ion implantation

Dongzhi Fu, Bingwen Zhang, Xingchen Pan, Fucong Fei, Yongda Chen, Ming Gao, Shuyi Wu, Jian He, Zhanbin Bai, Yiming Pan, Qinfang Zhang, Xuefeng Wang, Xinglong Wu, Fengqi Song

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Here we introduce lattice defects in WTe2 by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree with this. Electrical transport measurements show that, after GI, significant changes are observed in magnetoresistance and Hall resistance. The classical two-band model analysis shows that both electron and hole concentration are significantly reduced. According to the calculated results, ion implantation leads to significant changes in the band structure and the Fermi surface of the WTe2. Our results indicate that defect engineering is an effective route of controlling the electronic properties of WTe2 devices.

Original languageEnglish
Article number12688
JournalScientific reports
Issue number1
Publication statusPublished - 2017 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • General


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