Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, Y. Iwasa

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Abstract

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

Original languageEnglish
Article number142110
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
Publication statusPublished - 2010 Oct 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Asanuma, S., Xiang, P. H., Yamada, H., Sato, H., Inoue, I. H., Akoh, H., Sawa, A., Ueno, K., Shimotani, H., Yuan, H., Kawasaki, M., & Iwasa, Y. (2010). Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films. Applied Physics Letters, 97(14), [142110]. https://doi.org/10.1063/1.3496458