Tuning of the electron g factor in defect-free GaAs nanodisks

Li Wei Yang, Yi Chia Tsai, Yiming Li, Aiko Higo, Akihiro Murayama, S. Samukawa, O. Voskoboynikov

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2×2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.

Original languageEnglish
Article number245423
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Publication statusPublished - 2015 Dec 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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