TY - JOUR
T1 - Tuning of the electron g factor in defect-free GaAs nanodisks
AU - Yang, Li Wei
AU - Tsai, Yi Chia
AU - Li, Yiming
AU - Higo, Aiko
AU - Murayama, Akihiro
AU - Samukawa, S.
AU - Voskoboynikov, O.
PY - 2015/12/15
Y1 - 2015/12/15
N2 - We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2×2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.
AB - We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2×2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.
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U2 - 10.1103/PhysRevB.92.245423
DO - 10.1103/PhysRevB.92.245423
M3 - Article
AN - SCOPUS:84952342489
VL - 92
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 24
M1 - 245423
ER -