Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

K. Fukutani; T. Sato; P. V. Galiy; K. Sugawara; T. Takahashi

doi:10.1103/PhysRevB.93.205156

Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

K. Fukutani, T. Sato, P. V. Galiy, K. Sugawara, T. Takahashi

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m∗=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

Original language	English
Article number	205156
Journal	Physical Review B
Volume	93
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.93.205156
Publication status	Published - 2016 May 31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.93.205156

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title = "Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3",

abstract = "We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m∗=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.",

author = "K. Fukutani and T. Sato and Galiy, {P. V.} and K. Sugawara and T. Takahashi",

note = "Funding Information: This work was supported by Japan Society for the Promotion of Science (JSPS; KAKENHI 25287079, 15H02105), the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) (Innovative Area Topological Materials Science, 15H05853, and Science of Atomic Layers, 25107003), KEK-PF (Proposal No. 2015S2-003). Publisher Copyright: {\textcopyright} 2016 American Physical Society.",

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doi = "10.1103/PhysRevB.93.205156",

language = "English",

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AU - Fukutani, K.

AU - Sato, T.

AU - Galiy, P. V.

AU - Sugawara, K.

AU - Takahashi, T.

N1 - Funding Information: This work was supported by Japan Society for the Promotion of Science (JSPS; KAKENHI 25287079, 15H02105), the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) (Innovative Area Topological Materials Science, 15H05853, and Science of Atomic Layers, 25107003), KEK-PF (Proposal No. 2015S2-003). Publisher Copyright: © 2016 American Physical Society.

PY - 2016/5/31

Y1 - 2016/5/31

N2 - We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m∗=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

AB - We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m∗=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

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Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

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