Tunable surface electron spin splitting with electric double-layer transistors based on InN

Chunming Yin, Hongtao Yuan, Xinqiang Wang, Shitao Liu, Shan Zhang, Ning Tang, Fujun Xu, Zhuoyu Chen, Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge, Bo Shen

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Original languageEnglish
Pages (from-to)2024-2029
Number of pages6
JournalNano Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May 8
Externally publishedYes

Keywords

  • InN
  • Surface electron accumulation
  • circular photogalvanic effect
  • ionic liquid

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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