Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

N. Dyakonova, A. El Fatimy, Y. Meziani, T. Otsuji, D. Coquillat, W. Knap, F. Teppe, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

Original languageEnglish
Title of host publicationIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs
Publication statusPublished - 2010 Nov 30
Externally publishedYes
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy
Duration: 2010 Sep 52010 Sep 10

Publication series

NameIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Other

Other35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
CountryItaly
CityRome
Period10/9/510/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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