Tunable contact resistance in double-gate organic field-effect transistors

Yong Xu, Peter Darmawan, Chuan Liu, Yun Li, Takeo Minari, Gerard Ghibaudo, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


A study of the contact resistance (Rsd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, Rsd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, Rsd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of Rsd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit Rsd and its relevant impacts on organic transistor.

Original languageEnglish
Pages (from-to)1583-1588
Number of pages6
JournalOrganic Electronics
Issue number9
Publication statusPublished - 2012 Sep
Externally publishedYes


  • Contact resistance
  • Double-gate
  • Organic field-effect transistors
  • Pentacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Tunable contact resistance in double-gate organic field-effect transistors'. Together they form a unique fingerprint.

Cite this