Abstract
A study of the contact resistance (Rsd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, Rsd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, Rsd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of Rsd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit Rsd and its relevant impacts on organic transistor.
Original language | English |
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Pages (from-to) | 1583-1588 |
Number of pages | 6 |
Journal | Organic Electronics |
Volume | 13 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2012 Sep |
Externally published | Yes |
Keywords
- Contact resistance
- Double-gate
- Organic field-effect transistors
- Pentacene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering