TY - JOUR
T1 - Tunable contact resistance in double-gate organic field-effect transistors
AU - Xu, Yong
AU - Darmawan, Peter
AU - Liu, Chuan
AU - Li, Yun
AU - Minari, Takeo
AU - Ghibaudo, Gerard
AU - Tsukagoshi, Kazuhito
N1 - Funding Information:
This study was supported in part by a Grant for Advanced Industrial Technology Development (No. 11B11016d ) from the New Energy and Industrial Technology Development Organization (NEDO), Japan. It was also supported in part by a Grant-in-Aid for Scientific Research (No. 218505 ) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.
PY - 2012/9
Y1 - 2012/9
N2 - A study of the contact resistance (Rsd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, Rsd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, Rsd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of Rsd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit Rsd and its relevant impacts on organic transistor.
AB - A study of the contact resistance (Rsd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, Rsd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, Rsd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of Rsd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit Rsd and its relevant impacts on organic transistor.
KW - Contact resistance
KW - Double-gate
KW - Organic field-effect transistors
KW - Pentacene
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U2 - 10.1016/j.orgel.2012.05.008
DO - 10.1016/j.orgel.2012.05.008
M3 - Article
AN - SCOPUS:84861816010
VL - 13
SP - 1583
EP - 1588
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 9
ER -