TSV liner dielectric technology with spin-on low-k polymer

S. Lee, Y. Sugawara, M. Ito, H. Kino, T. Fukushima, T. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a BCB (benzocyclobutene) resin is employed as a spin-on low-k polymer for TSV liner dielectrics. The BCB is perfectly covered on the sidewall of deep Si holes with a diameter of 8 μm and depth of 40 μm (aspect ratio: 5). The step coverage of the BCB is high and controllable by conditioning the spin rotation speed, spin-coating time, and deforming pressure to eliminate bubbles formed in the deep Si holes prior to spin-coating. Cu-TSVs with the BCB liner dielectric are successfully formed by the subsequent electro-less plated and electroplated Cu technologies. This cost-effective spin-on BCB technology will be applied to via-last TSV fabrication at low temperature below 250 C to give low-capacitance TSVs.

Original languageEnglish
Title of host publication2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages346-349
Number of pages4
ISBN (Electronic)9784990218850
DOIs
Publication statusPublished - 2018 Jun 6
Event2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan
Duration: 2018 Apr 172018 Apr 21

Publication series

Name2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
Country/TerritoryJapan
CityKuwana, Mie
Period18/4/1718/4/21

Keywords

  • 3D integration
  • BCB
  • Low capacitance
  • Spin coating
  • TSV

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics

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