TY - JOUR
T1 - Trimethylgallium supply without the use of bubbling in gaas growth by metalorganic vapor phase epitaxy
AU - Ohuchi, Atsushi
AU - Ohno, Hideo
AU - Ohtsuka, Shunsuke
AU - Hasegawa, Hideki
PY - 1988/12
Y1 - 1988/12
N2 - In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H2carrier gas saturated with TMG. Saturation of H2is normally done by bubbling H2gas through liquid TMG. Here, we show that saturation of H2with TMG can be achieved through flowing H2over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH3showed a linear dependence with the flow rate of H2over TMG regardless of whether TMG was liquid or solid.
AB - In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H2carrier gas saturated with TMG. Saturation of H2is normally done by bubbling H2gas through liquid TMG. Here, we show that saturation of H2with TMG can be achieved through flowing H2over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH3showed a linear dependence with the flow rate of H2over TMG regardless of whether TMG was liquid or solid.
KW - Bubbling
KW - Metalorganic vapor phase epitaxy
KW - Trimethylgallium
UR - http://www.scopus.com/inward/record.url?scp=0024131037&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024131037&partnerID=8YFLogxK
U2 - 10.1143/JJAP.27.2420
DO - 10.1143/JJAP.27.2420
M3 - Article
AN - SCOPUS:0024131037
VL - 27
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12R
ER -