Trimethylgallium supply without the use of bubbling in gaas growth by metalorganic vapor phase epitaxy

Atsushi Ohuchi, Hideo Ohno, Shunsuke Ohtsuka, Hideki Hasegawa

Research output: Contribution to journalArticlepeer-review

Abstract

In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H2carrier gas saturated with TMG. Saturation of H2is normally done by bubbling H2gas through liquid TMG. Here, we show that saturation of H2with TMG can be achieved through flowing H2over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH3showed a linear dependence with the flow rate of H2over TMG regardless of whether TMG was liquid or solid.

Original languageEnglish
Number of pages1
JournalJapanese journal of applied physics
Volume27
Issue number12R
DOIs
Publication statusPublished - 1988 Dec
Externally publishedYes

Keywords

  • Bubbling
  • Metalorganic vapor phase epitaxy
  • Trimethylgallium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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