In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H2carrier gas saturated with TMG. Saturation of H2is normally done by bubbling H2gas through liquid TMG. Here, we show that saturation of H2with TMG can be achieved through flowing H2over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH3showed a linear dependence with the flow rate of H2over TMG regardless of whether TMG was liquid or solid.
- Metalorganic vapor phase epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)