TY - JOUR
T1 - Tri-gate polycrystalline silicon thin-film transistors fabricated by continuous-wave laser lateral crystallization with improved electron transport properties
AU - Fujii, Shuntaro
AU - Kuroki, Shin Ichiro
AU - Kawasaki, Yuya
AU - Kotani, Koji
PY - 2012/2
Y1 - 2012/2
N2 - Tri-gate channel structures were applied to polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by continuous-wave (CW) laser lateral crystallization (CLC). We had two objectives in using tri-gate structures in CLC poly-Si TFTs. One was the enhancement of effective electron mobility (μ eff) by using the tensile strain induced by the CLC process and the lateral-strain-relaxation effect in tri-gate structures. The other was the reduction of μ eff variation caused by increasing the number of surfaces with different crystal orientations by up to a factor of three. By applying tri-gate structures to CLC poly-Si TFTs, both 8% μ eff enhancement and 41% reduction of μ eff variation were achieved at the surface carrier density of 5 × 10 12 cm -2. These results are expected to be useful for the device size shrinkage of high-performance poly-Si TFT circuits.
AB - Tri-gate channel structures were applied to polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by continuous-wave (CW) laser lateral crystallization (CLC). We had two objectives in using tri-gate structures in CLC poly-Si TFTs. One was the enhancement of effective electron mobility (μ eff) by using the tensile strain induced by the CLC process and the lateral-strain-relaxation effect in tri-gate structures. The other was the reduction of μ eff variation caused by increasing the number of surfaces with different crystal orientations by up to a factor of three. By applying tri-gate structures to CLC poly-Si TFTs, both 8% μ eff enhancement and 41% reduction of μ eff variation were achieved at the surface carrier density of 5 × 10 12 cm -2. These results are expected to be useful for the device size shrinkage of high-performance poly-Si TFT circuits.
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U2 - 10.1143/JJAP.51.02BJ03
DO - 10.1143/JJAP.51.02BJ03
M3 - Article
AN - SCOPUS:84857471308
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 PART 2
M1 - 02BJ03
ER -