Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane

Takashi Morie, Junichi Murota

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Trench coverage of polysilicon deposited under low pressure using a SiH4–PH3–He system is investigated. The trench coverage becomes poorer with increasing SiH4or PH3partial pressure. This phenomenon is explained by assuming the contribution of Si2H6formed by the polymerization of SiH4in the gas phase to polysilicon deposition.

Original languageEnglish
Pages (from-to)L482-L484
JournalJapanese journal of applied physics
Volume23
Issue number7
DOIs
Publication statusPublished - 1984 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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