Trench coverage of polysilicon deposited under low pressure using a SiH4–PH3–He system is investigated. The trench coverage becomes poorer with increasing SiH4or PH3partial pressure. This phenomenon is explained by assuming the contribution of Si2H6formed by the polymerization of SiH4in the gas phase to polysilicon deposition.
ASJC Scopus subject areas
- Physics and Astronomy(all)