TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS.

Kouichi Iizuka, Hideki Hasegawa, Hideo Ohno, Naokatsu Sano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Interaction between semiconductor carrier waves and slow electromagnetic waves is investigated theoretically and experimentally. The theoretical analysis shows that transverse carrier confinement by suitable structures reduces carrier diffusion loss and enhances the interaction. Experimental carrier confinement by a thin GaAs layer and by a selectively doped AlGaAs/GaAs heterostructure indicates the presence of strong traveling wave interaction.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages577-582
Number of pages6
Edition79
Publication statusPublished - 1986 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Iizuka, K., Hasegawa, H., Ohno, H., & Sano, N. (1986). TRAVELLING WAVE INTERACTIONS IN GaAS AND AlGaAs/GaAs LAYERS. In Institute of Physics Conference Series (79 ed., pp. 577-582). (Institute of Physics Conference Series; No. 79).