Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

Go Yusa, H. Sakaki

Research output: Contribution to journalArticlepeer-review

221 Citations (Scopus)

Abstract

The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.

Original languageEnglish
Pages (from-to)345-347
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number3
DOIs
Publication statusPublished - 1997 Jan 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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