Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime

G. Yusa; H. Sakaki

doi:10.1016/S1386-9477(98)00150-7

Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime

G. Yusa, H. Sakaki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration N_s of two-dimensional electrons at a given gate voltage V_g is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.

Original language	English
Pages (from-to)	734-737
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00150-7
Publication status	Published - 1998 Jul 15
Externally published	Yes

Keywords

InAs quantum dots
MBE growth
Near-infrared regime
Trapping of electrons and holes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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abstract = "The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.",

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AU - Sakaki, H.

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Y1 - 1998/7/15

N2 - The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.

AB - The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.

KW - InAs quantum dots

KW - MBE growth

KW - Near-infrared regime

KW - Trapping of electrons and holes

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Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime

Abstract

Keywords

ASJC Scopus subject areas

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