Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime

G. Yusa, H. Sakaki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.

Original languageEnglish
Pages (from-to)734-737
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998 Jul 15
Externally publishedYes

Keywords

  • InAs quantum dots
  • MBE growth
  • Near-infrared regime
  • Trapping of electrons and holes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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