TY - JOUR
T1 - Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime
AU - Yusa, G.
AU - Sakaki, H.
N1 - Funding Information:
We wish to thank S.J. Allen, P.M. Petroff, and J. Kono (University of California Santa Barbara) for their fruitful discussions and continuous encouragement. One of the authors (GY) is thankful for receiving a Research Fellowship from the Japan Society for the Promotion of Science for Young Scientists and for the partial financial support. Part of this work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan.
PY - 1998/7/15
Y1 - 1998/7/15
N2 - The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.
AB - The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures in GaAs/n-AlGaAs heterostructures. It has been found that the concentration Ns of two-dimensional electrons at a given gate voltage Vg is persistently enhanced by laser illumination, because of the trapping of holes by QDs. We also studied how the number of trapped holes depends on the energy of excitation photons from a Ti-sapphire laser. Applications of this device for a memory and near-infrared detector are discussed.
KW - InAs quantum dots
KW - MBE growth
KW - Near-infrared regime
KW - Trapping of electrons and holes
UR - http://www.scopus.com/inward/record.url?scp=0004641696&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0004641696&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(98)00150-7
DO - 10.1016/S1386-9477(98)00150-7
M3 - Article
AN - SCOPUS:0004641696
VL - 2
SP - 734
EP - 737
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
ER -