TY - JOUR
T1 - Trap-related carrier transports in p-Channel field-effect transistor with polycrystalline si/hsion gate stack
AU - Chen, Jun
AU - Sekiguchi, Takashi
AU - Fukata, Naoki
AU - Takase, Masami
AU - Hasunuma, Ryu
AU - Yamabe, Kikuo
AU - Sato, Motoyuki
AU - Nara, Yasuo
AU - Yamada, Keisaku
AU - Chikyo, Toyohiro
PY - 2009/4/1
Y1 - 2009/4/1
N2 - A microscopic investigation of gate leakage behaviors in metal-oxide-semiconductor field-effect transistors (MOSFETs) with polycrystalline Si/HfSiON high-k gate stacks was carried out by an electron-beam-induced current (EBIC) technique. The transport mechanisms of electrons and holes in nonbreakdown MOSFETs were clarified. Carrier separated measurement revealed that hole transport in pFETs is significantly enhanced by charged traps, while electron transport in nFETs appears to be independent of such traps. A detailed investigation on the trap-related carrier transport in pFETs was carried out employing EBIC observations and gate bias and acceleration voltage dependences.
AB - A microscopic investigation of gate leakage behaviors in metal-oxide-semiconductor field-effect transistors (MOSFETs) with polycrystalline Si/HfSiON high-k gate stacks was carried out by an electron-beam-induced current (EBIC) technique. The transport mechanisms of electrons and holes in nonbreakdown MOSFETs were clarified. Carrier separated measurement revealed that hole transport in pFETs is significantly enhanced by charged traps, while electron transport in nFETs appears to be independent of such traps. A detailed investigation on the trap-related carrier transport in pFETs was carried out employing EBIC observations and gate bias and acceleration voltage dependences.
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U2 - 10.1143/JJAP.48.04C005
DO - 10.1143/JJAP.48.04C005
M3 - Article
AN - SCOPUS:77952512216
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04C005
ER -