Trap-related carrier transports in p-Channel field-effect transistor with polycrystalline si/hsion gate stack

Jun Chen; Takashi Sekiguchi; Naoki Fukata; Masami Takase; Ryu Hasunuma; Kikuo Yamabe; Motoyuki Sato; Yasuo Nara; Keisaku Yamada; Toyohiro Chikyo

doi:10.1143/JJAP.48.04C005

Trap-related carrier transports in p-Channel field-effect transistor with polycrystalline si/hsion gate stack

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada, Toyohiro Chikyo

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A microscopic investigation of gate leakage behaviors in metal-oxide-semiconductor field-effect transistors (MOSFETs) with polycrystalline Si/HfSiON high-k gate stacks was carried out by an electron-beam-induced current (EBIC) technique. The transport mechanisms of electrons and holes in nonbreakdown MOSFETs were clarified. Carrier separated measurement revealed that hole transport in pFETs is significantly enhanced by charged traps, while electron transport in nFETs appears to be independent of such traps. A detailed investigation on the trap-related carrier transport in pFETs was carried out employing EBIC observations and gate bias and acceleration voltage dependences.

Original language	English
Article number	04C005
Journal	Japanese journal of applied physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C005
Publication status	Published - 2009 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Trap-related carrier transports in p-Channel field-effect transistor with polycrystalline si/hsion gate stack. / Chen, Jun; Sekiguchi, Takashi; Fukata, Naoki; Takase, Masami; Hasunuma, Ryu; Yamabe, Kikuo; Sato, Motoyuki; Nara, Yasuo; Yamada, Keisaku; Chikyo, Toyohiro.

In: Japanese journal of applied physics, Vol. 48, No. 4 PART 2, 04C005, 01.04.2009.

Research output: Contribution to journal › Article › peer-review

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abstract = "A microscopic investigation of gate leakage behaviors in metal-oxide-semiconductor field-effect transistors (MOSFETs) with polycrystalline Si/HfSiON high-k gate stacks was carried out by an electron-beam-induced current (EBIC) technique. The transport mechanisms of electrons and holes in nonbreakdown MOSFETs were clarified. Carrier separated measurement revealed that hole transport in pFETs is significantly enhanced by charged traps, while electron transport in nFETs appears to be independent of such traps. A detailed investigation on the trap-related carrier transport in pFETs was carried out employing EBIC observations and gate bias and acceleration voltage dependences.",

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AU - Hasunuma, Ryu

AU - Yamabe, Kikuo

AU - Sato, Motoyuki

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Trap-related carrier transports in p-Channel field-effect transistor with polycrystalline si/hsion gate stack

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