Trap generation induced by local distortion in amorphous silicon dioxide film

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Abstract

The generation mechanism, the stable atomic configuration, and the properties of intrinsic charge traps in amorphous silicon dioxide (a-SiO2) are investigated employing the ab initio molecular orbital method applied to a cluster model. It is found that an injected hole is trapped in a nonbonding 2p orbital of an oxygen atom even though there are initially no defects and impurities in a-SiO2. Thus, it acts as a trap for an electron. The local distortion in a-SiO2 structure, especially the stretching of a Si-O-Si, induces the hole trapping. It is also found that the effect of the local distortion on electron trapping is small.

Original languageEnglish
Pages (from-to)1540-1543
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
DOIs
Publication statusPublished - 1996 Feb

Keywords

  • Hole
  • Local distortion
  • Molecular orbital method
  • Silicon dioxide
  • Trap

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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