Abstract
Transport properties of two-dimensional electron gas (2DEG) are studied in selectively doped GaAs/n-AlGaAs heterojunctions, in which nanometer-scale InAs dots are embedded in the vicinity of the GaAs channel. When the distance W d between the InAs dot layer and the channel is reduced from 80 to 15 nm, the mobility μ of electrons at 77 K decreases drastically from 1.1×105 to 1.1 ×103 cm2/V s, while the carrier concentration increases from 1.1×1011 to 5.3×1011 cm-2. Such a reduction of mobility is found only when the average thickness of InAs layer is above the onset level (∼1.5 monolayer) for the dot formation. Origins of these changes in μ and Ns are discussed in connection with dot-induced modulations of the electronic potential V(r) in the channel.
Original language | English |
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Pages (from-to) | 3444 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
Publication status | Published - 1995 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)