Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, H. Noge

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99 Citations (Scopus)

Abstract

Transport properties of two-dimensional electron gas (2DEG) are studied in selectively doped GaAs/n-AlGaAs heterojunctions, in which nanometer-scale InAs dots are embedded in the vicinity of the GaAs channel. When the distance W d between the InAs dot layer and the channel is reduced from 80 to 15 nm, the mobility μ of electrons at 77 K decreases drastically from 1.1×105 to 1.1 ×103 cm2/V s, while the carrier concentration increases from 1.1×1011 to 5.3×1011 cm-2. Such a reduction of mobility is found only when the average thickness of InAs layer is above the onset level (∼1.5 monolayer) for the dot formation. Origins of these changes in μ and Ns are discussed in connection with dot-induced modulations of the electronic potential V(r) in the channel.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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