Abstract
Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of µA order are obtained in the fabricated structures.
| Original language | English |
|---|---|
| Pages (from-to) | L368-L370 |
| Journal | Japanese journal of applied physics |
| Volume | 29 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1990 Feb |
| Externally published | Yes |
Keywords
- AIGaAs
- Ballistic point contact
- Field-effect
- Focused ion beam
- GaAs
- One-dimensional channel
- Transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)