Abstract
Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of µA order are obtained in the fabricated structures.
Original language | English |
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Pages (from-to) | L368-L370 |
Journal | Japanese journal of applied physics |
Volume | 29 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1990 Feb |
Externally published | Yes |
Keywords
- AIGaAs
- Ballistic point contact
- Field-effect
- Focused ion beam
- GaAs
- One-dimensional channel
- Transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)