Transport properties of modulation-doped structures grown by molecular beam epitaxy after focused ion beam implantation

Masayuki Itoh, Tadashi Saku, Toshimasa Fujisawa, Yoshiro Hirayama, Seigo Tarucha

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Modulation-doped structures are grown by molecular beam epitaxy after focused ion beam writing. The growth and implantation chambers are connected in a high vacuum to minimize the effect of growth interruption. The electron channel is drastically depleted by the buried Be+ implanted region, but only slightly depleted by the buried Au+ and Au2+ implanted regions. This is because Be+ implantation forms a p-type material, while Au+ or Au2+ implaniation leaves damage only in the n-type material. Be+ implantation is therefore used to fabricate 0.1 ^in-wide wires with electron mobility of 2.1 × 105 cm2/Vs.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalJapanese journal of applied physics
Volume33
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

Keywords

  • Damage
  • Dose
  • Electron mobility
  • Focused ion beam
  • Growth interruption
  • High vacuum
  • Modulation doped structure
  • Molecular beam epitaxy
  • Narrow wire
  • P-type material

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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