Transport properties of closely-packed carbon nanotubes film on SiC tuned by Si-doping

Wataru Norimatsu, Takehiro Maruyama, Kenta Yoshida, Koichi Takase, Michiko Kusunoki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Here, we reveal origins of the planar electrical transport of closely-packed carbon nanotubes (CNTs) and silicon-doped CNTs (Si-CNTs) films. Their electrical resistivities increased with decreasing temperature, but exhibit a plateau below 60 K. This phenomenon can be well described using the simple-two-band model, which is often used to understand the electronic properties of graphite. Cryogenic energy-filtered transmission electron microscopy visualizes Si atoms dispersed finely in CNTs, preserving the structural features of CNTs. These Si atoms induced effective carriers above 150 K, while three-dimensional variable range hopping and weak localization are dominant in their transport below 50 and 10 K, respectively.

Original languageEnglish
Article number105102
JournalApplied Physics Express
Volume5
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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