Transport properties of a nanotube-based transistor

K. Esfarjani, A. A. Farajian, F. Ebrahimi, Y. Kawazoe

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Transport properties of doped nanotube-based double junctions forming a nanotransistor and investigated within the tight binding formalism. The effects of doping gate length and gate soften have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.

Original languageEnglish
Pages (from-to)353-355
Number of pages3
JournalEuropean Physical Journal D
Volume8
Issue number3
DOIs
Publication statusPublished - 2001 Sep

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Transport properties of a nanotube-based transistor'. Together they form a unique fingerprint.

Cite this