Transport properties of a lateral semiconductor quantum dot defined by a single connected metallic front-gate

Andreas Richter, Ken Ichi Matsuda, Tatsushi Akazaki, Tadashi Saku, Hiroyuki Tamura, Yoshiro Hirayama, Hideaki Takayanagi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We present studies on the electric transport in a lateral GaAs/AlGaAs quantum dot defined by a patterned single connected metallic front-gate. This gate design allows to easily couple a large number of quantum dots and therefore holds high potential in the design of new materials with tailor-made band structures based on quantum dot superlattices of controlled shape. Clear Coulomb diamond structures and well pronounced tunneling peaks observed in experiment indicate that single-electron control has been achieved. However, the dependence on electron density in the heterostructure embedding the dot, which is controlled by an additional back-gate, reveals that transport characteristics are strongly influenced supposedly by potential fluctuations in the dot and lead regions.

Original languageEnglish
Pages (from-to)472-478
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number4
Publication statusPublished - 2005 Jan 1
Externally publishedYes


  • AlGaAs
  • Back-gated HEMT
  • Coulomb blockade
  • Electronic transport
  • GaAs
  • Quantum dot
  • Single electron tunneling
  • Single front-gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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