Transport properties and electronic structure of fluorine-doped SnO2 prepared by ultrasonic assisted mist deposition

Enju Sakai, Naoya Tsutsumi, Koji Horiba, Hiroshi Kumigashira, Yoshiko Tsuji

Research output: Contribution to journalArticlepeer-review


We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.

Original languageEnglish
Article number147041
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 2021 Feb


  • Transparent conductive oxides
  • Ultrasonic mist deposition
  • XAS
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

Fingerprint Dive into the research topics of 'Transport properties and electronic structure of fluorine-doped SnO<sub>2</sub> prepared by ultrasonic assisted mist deposition'. Together they form a unique fingerprint.

Cite this