Transport properties and electronic structure of fluorine-doped SnO2 prepared by ultrasonic assisted mist deposition

Enju Sakai; Naoya Tsutsumi; Koji Horiba; Hiroshi Kumigashira; Yoshiko Tsuji

doi:10.1016/j.elspec.2020.147041

Transport properties and electronic structure of fluorine-doped SnO₂ prepared by ultrasonic assisted mist deposition

Enju Sakai, Naoya Tsutsumi, Koji Horiba, Hiroshi Kumigashira, Yoshiko Tsuji

Division of Organic- and Biomaterials Research

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.

Original language	English
Article number	147041
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	247
DOIs	https://doi.org/10.1016/j.elspec.2020.147041
Publication status	Published - 2021 Feb

Keywords

Transparent conductive oxides
Ultrasonic mist deposition
XAS
XPS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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title = "Transport properties and electronic structure of fluorine-doped SnO2 prepared by ultrasonic assisted mist deposition",

abstract = "We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.",

keywords = "Transparent conductive oxides, Ultrasonic mist deposition, XAS, XPS",

author = "Enju Sakai and Naoya Tsutsumi and Koji Horiba and Hiroshi Kumigashira and Yoshiko Tsuji",

note = "Funding Information: The work at KEK-PF was performed under the approval of the Program Advisory Committee (Proposal no. 2017G609) at the Institute of Materials Structure Science, KEK. The authors are very grateful to T. Fujii for his help in transport measurements.",

year = "2021",

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doi = "10.1016/j.elspec.2020.147041",

language = "English",

volume = "247",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

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AU - Sakai, Enju

AU - Tsutsumi, Naoya

AU - Horiba, Koji

AU - Kumigashira, Hiroshi

AU - Tsuji, Yoshiko

N1 - Funding Information: The work at KEK-PF was performed under the approval of the Program Advisory Committee (Proposal no. 2017G609) at the Institute of Materials Structure Science, KEK. The authors are very grateful to T. Fujii for his help in transport measurements.

PY - 2021/2

Y1 - 2021/2

N2 - We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.

AB - We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.

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KW - Ultrasonic mist deposition

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