Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima; Masahi Uematsu; Kazuto Akagi; Shinji Tsuneyuki; Toru Akiyama; Kenji Shiraishi

doi:10.1143/JJAP.45.694

Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

Original language	English
Pages (from-to)	694-699
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.45.694
Publication status	Published - 2006 Feb 8
Externally published	Yes

Keywords

Defects
First-principles calculation
Interface
Oxidation
Si
Si oxide
Transformation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.694

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@article{8af223f58da140f78cf14bb009da7b73,

title = "Transport mechanism of interfacial network forming atoms during silicon oxidation",

abstract = "A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.",

keywords = "Defects, First-principles calculation, Interface, Oxidation, Si, Si oxide, Transformation",

author = "Hiroyuki Kageshima and Masahi Uematsu and Kazuto Akagi and Shinji Tsuneyuki and Toru Akiyama and Kenji Shiraishi",

year = "2006",

month = feb,

day = "8",

doi = "10.1143/JJAP.45.694",

language = "English",

volume = "45",

pages = "694--699",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 A",

}

TY - JOUR

T1 - Transport mechanism of interfacial network forming atoms during silicon oxidation

AU - Kageshima, Hiroyuki

AU - Uematsu, Masahi

AU - Akagi, Kazuto

AU - Tsuneyuki, Shinji

AU - Akiyama, Toru

AU - Shiraishi, Kenji

PY - 2006/2/8

Y1 - 2006/2/8

N2 - A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

AB - A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

KW - Defects

KW - First-principles calculation

KW - Interface

KW - Oxidation

KW - Si

KW - Si oxide

KW - Transformation

UR - http://www.scopus.com/inward/record.url?scp=32244445293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32244445293&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.694

DO - 10.1143/JJAP.45.694

M3 - Article

AN - SCOPUS:32244445293

VL - 45

SP - 694

EP - 699

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 A

ER -

Transport mechanism of interfacial network forming atoms during silicon oxidation

Abstract

Keywords

ASJC Scopus subject areas

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