Abstract
A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 694-699 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 2006 Feb 8 |
| Externally published | Yes |
Keywords
- Defects
- First-principles calculation
- Interface
- Oxidation
- Si
- Si oxide
- Transformation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., & Shiraishi, K. (2006). Transport mechanism of interfacial network forming atoms during silicon oxidation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(2 A), 694-699. https://doi.org/10.1143/JJAP.45.694