Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range

J. Herfort, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The two‐dimensional electron gas with electron densities higher than 1016 m−2 which is formed at the interface in undoped GaAs/AlxGa1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m2/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov‐de Haas measurements in these devices.

Original languageEnglish
Pages (from-to)3360-3362
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1996 Nov 25
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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