Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.
|Number of pages||4|
|Publication status||Published - 1990 Jan 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas