Transport characteristics of multiple parallel balistic point contacts

Research output: Contribution to conferencePaper

Abstract

Multiple parallel ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. Total conductance of the fabricated structure in zero magnetic field is the sum of the conductance of each contact, and quantized characteristics are observed in the μA order. On the other hand, conductance of multiple parallel point contacts drastically decreases in a magnetic field. This conductance decrease originates from the novel type of magneto-depopulation accompanying ballistic circulating channels through pairs of contacts. Conductance oscillations corresponding to interference in circulating channels are also observed in the fabricated structures.

Original languageEnglish
Pages729-732
Number of pages4
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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    Hirayama, Y. (1990). Transport characteristics of multiple parallel balistic point contacts. 729-732. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, . https://doi.org/10.7567/ssdm.1990.s-a-4