Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Firman Mangasa Simanjuntak; Takeo Ohno; Kana Minami; Seiji Samukawa

doi:10.35848/1347-4065/ac762e

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Firman Mangasa Simanjuntak, Takeo Ohno, Kana Minami, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

Original language	English
Article number	SM1010
Journal	Japanese journal of applied physics
Volume	61
Issue number	SM
DOIs	https://doi.org/10.35848/1347-4065/ac762e
Publication status	Published - 2022 Oct 1

Keywords

ReRAM
ZnO
material
memristor
plasma
transparent
treatment

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.35848/1347-4065/ac762e

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abstract = "In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.",

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author = "Simanjuntak, {Firman Mangasa} and Takeo Ohno and Kana Minami and Seiji Samukawa",

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AU - Simanjuntak, Firman Mangasa

AU - Ohno, Takeo

AU - Minami, Kana

AU - Samukawa, Seiji

PY - 2022/10/1

Y1 - 2022/10/1

N2 - In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

AB - In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

KW - ReRAM

KW - ZnO

KW - material

KW - memristor

KW - plasma

KW - transparent

KW - treatment

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Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Abstract

Keywords

ASJC Scopus subject areas

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