Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Firman Mangasa Simanjuntak, Takeo Ohno, Kana Minami, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review


In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

Original languageEnglish
Article numberSM1010
JournalJapanese journal of applied physics
Issue numberSM
Publication statusPublished - 2022 Oct 1


  • ReRAM
  • ZnO
  • material
  • memristor
  • plasma
  • transparent
  • treatment

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment'. Together they form a unique fingerprint.

Cite this