Transparent ZnO-based ohmic contact to p-GaN

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, Z. Liliental-Weber

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ∼1×10-3Ωcm and resulted in ohmic contacts of resistivity ∼1×10-2Ωcm2 to low-doped p-GaN, and light transmittance of ∼75% in the wavelength range of 400-700 nm.

Original languageEnglish
Pages (from-to)831-836
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Transparent ZnO-based ohmic contact to p-GaN'. Together they form a unique fingerprint.

Cite this