Transparent ZnO-based ohmic contact to p-GaN

E. Kaminska; A. Piotrowska; K. Golaszewska; M. Guziewicz; R. Kruszka; A. Kudla; T. Ochalski; A. Barcz; T. Dietl; F. Matsukura; M. Sawicki; A. Wawro; M. Zielinski; J. Jasinski; Z. Liliental-Weber

Transparent ZnO-based ohmic contact to p-GaN

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, Z. Liliental-Weber

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ∼1×10^-3Ωcm and resulted in ohmic contacts of resistivity ∼1×10^-2Ωcm² to low-doped p-GaN, and light transmittance of ∼75% in the wavelength range of 400-700 nm.

Original language	English
Pages (from-to)	831-836
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Transparent ZnO-based ohmic contact to p-GaN. / Kaminska, E.; Piotrowska, A.; Golaszewska, K.; Guziewicz, M.; Kruszka, R.; Kudla, A.; Ochalski, T.; Barcz, A.; Dietl, T.; Matsukura, F.; Sawicki, M.; Wawro, A.; Zielinski, M.; Jasinski, J.; Liliental-Weber, Z.

In: Materials Research Society Symposium - Proceedings, Vol. 693, 01.01.2002, p. 831-836.

Research output: Contribution to journal › Article › peer-review

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abstract = "Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ∼1×10-3Ωcm and resulted in ohmic contacts of resistivity ∼1×10-2Ωcm2 to low-doped p-GaN, and light transmittance of ∼75% in the wavelength range of 400-700 nm.",

author = "E. Kaminska and A. Piotrowska and K. Golaszewska and M. Guziewicz and R. Kruszka and A. Kudla and T. Ochalski and A. Barcz and T. Dietl and F. Matsukura and M. Sawicki and A. Wawro and M. Zielinski and J. Jasinski and Z. Liliental-Weber",

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AU - Kaminska, E.

AU - Piotrowska, A.

AU - Golaszewska, K.

AU - Guziewicz, M.

AU - Kruszka, R.

AU - Kudla, A.

AU - Ochalski, T.

AU - Barcz, A.

AU - Dietl, T.

AU - Matsukura, F.

AU - Sawicki, M.

AU - Wawro, A.

AU - Zielinski, M.

AU - Jasinski, J.

AU - Liliental-Weber, Z.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ∼1×10-3Ωcm and resulted in ohmic contacts of resistivity ∼1×10-2Ωcm2 to low-doped p-GaN, and light transmittance of ∼75% in the wavelength range of 400-700 nm.

AB - Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ∼1×10-3Ωcm and resulted in ohmic contacts of resistivity ∼1×10-2Ωcm2 to low-doped p-GaN, and light transmittance of ∼75% in the wavelength range of 400-700 nm.

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Transparent ZnO-based ohmic contact to p-GaN

Abstract

ASJC Scopus subject areas

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