Transparent highly oriented 3C-SiC bulks by halide laser CVD

Hong Cheng, Meijun Yang, Youfeng Lai, Mingwei Hu, Qizhong Li, Rong Tu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Transparent and highly oriented 3C-SiC bulks were speedily fabricated at deposition temperature (Tdep) of 1623 K by halide laser chemical vapor deposition (HLCVD). The effect of total pressure (Ptot) on the optical transmittance, preferred orientation, microstructure, deposition rate (Rdep) and micro-hardness were investigated. The maximum Rdep of the transparent 3C-SiC reached 2450 μm/h at Ptot = 10 kPa. With an increase in Ptot, the transmittance of 3C-SiC bulks increased firstly, and then decreased. At Ptot = 10 kPa, 3C-SiC bulk, a highly <111>-oriented and low density of defects, showed the highest transmittance, greater than 55% in the wavelength range of 800–1100 nm. At Ptot = 4 kPa and 20 kPa, 3C-SiC bulks showed much lower transmittance, in which contained poorly oriented grains and numerous defects. The Vickers micro-hardness of 3C-SiC bulks increased with increasing Ptot and showed the highest value of 34.8 GPa at Ptot = 40 kPa.

Original languageEnglish
Pages (from-to)3057-3063
Number of pages7
JournalJournal of the European Ceramic Society
Issue number9
Publication statusPublished - 2018 Aug


  • Halide laser CVD (HLCVD)
  • Highly oriented
  • Microstructure
  • Optical transmittance
  • Transparent 3C-SiC bulk

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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