Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

T. Hitosugi; A. Ueda; S. Nakao; N. Yamada; Y. Furubayashi; Y. Hirose; S. Konuma; T. Shimada; T. Hasegawa

doi:10.1016/j.tsf.2007.10.028

Transparent conducting properties of anatase Ti_0.94Nb_0.06O₂ polycrystalline films on glass substrate

T. Hitosugi, A. Ueda, S. Nakao, N. Yamada, Y. Furubayashi, Y. Hirose, S. Konuma, T. Shimada, T. Hasegawa

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on transparent conducting properties of anatase Ti_0.94Nb_0.06O₂ (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 °C, with subsequent H₂-annealing at 500 °C. Polycrystalline TNO films showed resistivity of 4.5 × 10^{- 4} Ω cm and 1.5 × 10^{- 3} Ω cm for films prepared at substrate temperature of room temperature and 250 °C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

Original language	English
Pages (from-to)	5750-5753
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2007.10.028
Publication status	Published - 2008 Jul 1

Keywords

Nb-doped
Pulsed laser deposition
TNO
TiO
Titanium dioxide
Transparent conducting oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.10.028

Cite this

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title = "Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate",

abstract = "We report on transparent conducting properties of anatase Ti0.94Nb0.06O2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 °C, with subsequent H2-annealing at 500 °C. Polycrystalline TNO films showed resistivity of 4.5 × 10- 4 Ω cm and 1.5 × 10- 3 Ω cm for films prepared at substrate temperature of room temperature and 250 °C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.",

keywords = "Nb-doped, Pulsed laser deposition, TNO, TiO, Titanium dioxide, Transparent conducting oxide",

author = "T. Hitosugi and A. Ueda and S. Nakao and N. Yamada and Y. Furubayashi and Y. Hirose and S. Konuma and T. Shimada and T. Hasegawa",

year = "2008",

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T1 - Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

AU - Hitosugi, T.

AU - Ueda, A.

AU - Nakao, S.

AU - Yamada, N.

AU - Furubayashi, Y.

AU - Hirose, Y.

AU - Konuma, S.

AU - Shimada, T.

AU - Hasegawa, T.

PY - 2008/7/1

Y1 - 2008/7/1

N2 - We report on transparent conducting properties of anatase Ti0.94Nb0.06O2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 °C, with subsequent H2-annealing at 500 °C. Polycrystalline TNO films showed resistivity of 4.5 × 10- 4 Ω cm and 1.5 × 10- 3 Ω cm for films prepared at substrate temperature of room temperature and 250 °C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

AB - We report on transparent conducting properties of anatase Ti0.94Nb0.06O2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 °C, with subsequent H2-annealing at 500 °C. Polycrystalline TNO films showed resistivity of 4.5 × 10- 4 Ω cm and 1.5 × 10- 3 Ω cm for films prepared at substrate temperature of room temperature and 250 °C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

KW - Nb-doped

KW - Pulsed laser deposition

KW - TNO

KW - TiO

KW - Titanium dioxide

KW - Transparent conducting oxide

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