Transmission electron microscopy study of Sn-Doped sintered indium oxide

Yoshimitsu Ishikawa; Hitoshi Nagayama; Hirokuni Hoshino; Michiharu Ohgai; Naoya Shibata; Takahisa Yamamoto; Yuichi Ikuhara

doi:10.2320/matertrans.MC200814

Transmission electron microscopy study of Sn-Doped sintered indium oxide

Yoshimitsu Ishikawa, Hitoshi Nagayama, Hirokuni Hoshino, Michiharu Ohgai, Naoya Shibata, Takahisa Yamamoto, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In₄Sn₃O₁₂ formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O^2- ions in the vacancy sites of the bixbyite structure during the substitution of In³⁺ sites by Sn⁴⁺.

Original language	English
Pages (from-to)	959-963
Number of pages	5
Journal	Materials Transactions
Volume	50
Issue number	5
DOIs	https://doi.org/10.2320/matertrans.MC200814
Publication status	Published - 2009 May

Keywords

Bixbyite structure
Fluorite structure
Precipitate
Tin-doped indium oxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.MC200814

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@article{6a67899b3e6e4c33ab203156a38ea6a5,

title = "Transmission electron microscopy study of Sn-Doped sintered indium oxide",

abstract = "Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.",

keywords = "Bixbyite structure, Fluorite structure, Precipitate, Tin-doped indium oxide",

author = "Yoshimitsu Ishikawa and Hitoshi Nagayama and Hirokuni Hoshino and Michiharu Ohgai and Naoya Shibata and Takahisa Yamamoto and Yuichi Ikuhara",

year = "2009",

month = may,

doi = "10.2320/matertrans.MC200814",

language = "English",

volume = "50",

pages = "959--963",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "5",

}

TY - JOUR

T1 - Transmission electron microscopy study of Sn-Doped sintered indium oxide

AU - Ishikawa, Yoshimitsu

AU - Nagayama, Hitoshi

AU - Hoshino, Hirokuni

AU - Ohgai, Michiharu

AU - Shibata, Naoya

AU - Yamamoto, Takahisa

AU - Ikuhara, Yuichi

PY - 2009/5

Y1 - 2009/5

N2 - Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.

AB - Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.

KW - Bixbyite structure

KW - Fluorite structure

KW - Precipitate

KW - Tin-doped indium oxide

UR - http://www.scopus.com/inward/record.url?scp=67650496620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650496620&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MC200814

DO - 10.2320/matertrans.MC200814

M3 - Article

AN - SCOPUS:67650496620

VL - 50

SP - 959

EP - 963

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 5

ER -

Transmission electron microscopy study of Sn-Doped sintered indium oxide

Abstract

Keywords

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