A 0.5 μm thick Gd2Zr2O7 layer was deposited by the ion-beam-assisted deposition (IBAD) method on an Ni-based alloy (Hastelloy), and subsequently a 3 μm thick CeO2 layer was coated by the pulsed-laser deposition (PLD) method. The in-plane alignment (Δφ) of the Gd2Zr2O7 layer and the CeO2 layer were 25° and 4.9°, respectively. TEM cross-sectional and plan-view specimens of the CeO2/Gd 2Zr2O7 multilayer were prepared for detailed microstructural characterization. It was observed that the Gd2Zr 2O7 layer has a columnar texture perpendicular to the Hastelloy tape surface. The columnar texture was composed of fine grains well aligned in the 〈001〉 direction. Therefore the boundaries of columns could not be observed clearly. In the CeO2 layer, the nucleation process of CeO2 grains on the Gd2Zr2O 7 surface was strongly affected by both the orientation relationships and the microstructures of the Gd2Zr2O7 layer. As the CeO2 grains grew from the Gd2Zr2O 7 surface, the in-plane alignment improved dramatically. The boundaries of CeO2 grains could be observed clearly and were identified as small angle tilt grain boundaries.
- In-plane alignment
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering