Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110) and 3C-SiC(100) virtual substrates

Hiroyuki Handa, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

By conducting a heteroepitaxy of a 3C-SiC film on a Si substrate and by annealing its surface in a UHV ambient, epitaxial graphene can be formed on such 3C-SiC virtual substrates. While the growth on the Si-terminated 3C-SiC(111)/Si(111) surface is known to proceed in a similar manner as on the Si-terminated 6H-SiC(0001) surface, successful growth of graphene on 3C-SiC(100)/Si(100) and 3C-SiC(110)/Si(110) surfaces remains puzzling. We have carried out detailed cross-sectional transmission-electron-microscopy observations on these systems to find out that (111)-facets may play crucial roles in the initiation of graphene on these surfaces. This observation also accounts for the absence of the interface layer at the graphene/SiC in these orientations.

Original languageEnglish
Title of host publicationHeteroSiC and WASMPE 2011
PublisherTrans Tech Publications Ltd
Pages242-245
Number of pages4
ISBN (Print)9783037853320
DOIs
Publication statusPublished - 2012
Event4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011 - Tours, France
Duration: 2011 Jun 272011 Jun 30

Publication series

NameMaterials Science Forum
Volume711
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011
CountryFrance
CityTours
Period11/6/2711/6/30

Keywords

  • 3C-SiC
  • Epitaxial graphene
  • Graphene
  • XTEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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