The crystallization process and the pre-crystallization structural change in reactively sputtered a-Ge: H/a-GeNx multilayer structures have been studied by high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). HRTEM photographs and XRD data show that the a-Ge:H layers crystallize without disrupting the multilayer structure and that the interfaces after the crystallization are atomically smooth and uniform. Orientated nucleation with the Ge(111) crystal plane parallel to that of the a-Ge:H layers indicates that relaxation of the interfacial structural mismatch dominates the crystallization process of a-Ge: H/a-GeNx multilayer films. A HRTEM photograph of the crystallized Ge layer shows that monatomic steps at c-Ge/a-GeNx interfaces are present, suggesting monolayer growth during deposition of the amorphous materials.
|Number of pages||7|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|Publication status||Published - 1989 Jul|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)