Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations

Hiroyuki Handa; Ryota Takahashi; Shunsuke Abe; Kei Imaizumi; Eiji Saitoh; Myung Ho Jung; Shun Ito; Hirokazu Fukidome; Maki Suemitsu

doi:10.1143/JJAP.50.04DH02

Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations

Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saitoh, Myung Ho Jung, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.

Original language	English
Article number	04DH02
Journal	Japanese journal of applied physics
Volume	50
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.04DH02
Publication status	Published - 2011 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Handa, H., Takahashi, R., Abe, S., Imaizumi, K., Saitoh, E., Jung, M. H., Ito, S., Fukidome, H., & Suemitsu, M. (2011). Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations. Japanese journal of applied physics, 50(4 PART 2), [04DH02]. https://doi.org/10.1143/JJAP.50.04DH02

Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations. / Handa, Hiroyuki; Takahashi, Ryota; Abe, Shunsuke; Imaizumi, Kei; Saitoh, Eiji; Jung, Myung Ho; Ito, Shun; Fukidome, Hirokazu; Suemitsu, Maki.

In: Japanese journal of applied physics, Vol. 50, No. 4 PART 2, 04DH02, 04.2011.

Research output: Contribution to journal › Article › peer-review

Handa, H, Takahashi, R, Abe, S, Imaizumi, K, Saitoh, E, Jung, MH, Ito, S, Fukidome, H & Suemitsu, M 2011, 'Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations', Japanese journal of applied physics, vol. 50, no. 4 PART 2, 04DH02. https://doi.org/10.1143/JJAP.50.04DH02

Handa, Hiroyuki ; Takahashi, Ryota ; Abe, Shunsuke ; Imaizumi, Kei ; Saitoh, Eiji ; Jung, Myung Ho ; Ito, Shun ; Fukidome, Hirokazu ; Suemitsu, Maki. / Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations. In: Japanese journal of applied physics. 2011 ; Vol. 50, No. 4 PART 2.

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