Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations

Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saitoh, Myung Ho Jung, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

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19 Citations (Scopus)

Abstract

Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.

Original languageEnglish
Article number04DH02
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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