TY - JOUR
T1 - Transmission electron microscopy and raman-scattering spectroscopy observation on the interface structure of graphene formed on Si substrates with various orientations
AU - Handa, Hiroyuki
AU - Takahashi, Ryota
AU - Abe, Shunsuke
AU - Imaizumi, Kei
AU - Saito, Eiji
AU - Jung, Myung Ho
AU - Ito, Shun
AU - Fukidome, Hirokazu
AU - Suemitsu, Maki
PY - 2011/4
Y1 - 2011/4
N2 - Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.
AB - Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.
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U2 - 10.1143/JJAP.50.04DH02
DO - 10.1143/JJAP.50.04DH02
M3 - Article
AN - SCOPUS:79955454459
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DH02
ER -