A threading dislocation (TD) in 4H-SiC, which was interpreted as a right-handed threading screw dislocation (TSD) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na 2O 2 additive (KN etching), was characterized by large-angle convergent-beam electron diffraction (LACBED) and weak-beam dark-field methods. It was found that this TD was a so-called c + a dislocation with Burgers vector of b =  + (1/3), which is often misinterpreted as TSD (c-dislocation) by SMBXT and KN etching. The rotation direction of the screw component within the c + a TD determined by LACBED agreed with the SMBXT observation.
ASJC Scopus subject areas
- Physics and Astronomy(all)