Transition-voltage method for estimating contact resistance in organic thin-film transistors

S. D. Wang, Y. Yan, K. Tsukagoshi

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report a simple method for evaluating the contact resistance $(R-{C})$ in organic thin-film transistors, utilizing the measurement of the transition voltage between the linear and saturation regimes in the output characteristics. This method does not need the complex electrode patterning, and thus, it could be useful for the practical RC test. The RC extracted from the transition-voltage method shows a decrease with increasing gate voltage, and the results are similar with those extracted from the transfer-line method, indicating the preciseness of the proposed transition-voltage method.

Original languageEnglish
Article number5439939
Pages (from-to)509-511
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
Publication statusPublished - 2010 May 1
Externally publishedYes

Keywords

  • Contact resistance
  • Pentacene
  • Thin-film transistors (TFTs)
  • Transition voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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