Transition of carbon binding states on Si(1 0 0) depending on substrate temperature and its effect on Ge growth

Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science

Physics & Astronomy