Transition metal complex reaction etching with neutral beam and its mechanism investigated by first-principles calculation

Tomohiro Kubota, Yoshiyuki Kikuchi, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then 'hydrogen movement' reaction can occur by argon neutral beam bombardment, and it weaken chemical bonds at the oxide surface. The etching process is like following: (1) oxidation of metal surface, (2) adsorption of ethanol, and (3) hydrogen movement. Especially, the 'hydrogen movement' is the reason why oxidation is needed. Such understanding should be useful to design new etching processes using transition metal complex.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages937-940
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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