TY - GEN
T1 - Transition metal complex reaction etching with neutral beam and its mechanism investigated by first-principles calculation
AU - Kubota, Tomohiro
AU - Kikuchi, Yoshiyuki
AU - Samukawa, Seiji
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then 'hydrogen movement' reaction can occur by argon neutral beam bombardment, and it weaken chemical bonds at the oxide surface. The etching process is like following: (1) oxidation of metal surface, (2) adsorption of ethanol, and (3) hydrogen movement. Especially, the 'hydrogen movement' is the reason why oxidation is needed. Such understanding should be useful to design new etching processes using transition metal complex.
AB - Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then 'hydrogen movement' reaction can occur by argon neutral beam bombardment, and it weaken chemical bonds at the oxide surface. The etching process is like following: (1) oxidation of metal surface, (2) adsorption of ethanol, and (3) hydrogen movement. Especially, the 'hydrogen movement' is the reason why oxidation is needed. Such understanding should be useful to design new etching processes using transition metal complex.
UR - http://www.scopus.com/inward/record.url?scp=85006870154&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2016.7751342
DO - 10.1109/NANO.2016.7751342
M3 - Conference contribution
AN - SCOPUS:85006870154
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 937
EP - 940
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -