Transition from random to island growth mode during Si(100)-(2×1) dry oxidation and its description with autocatalytic reaction model

M. Suemitsu, Y. Enta, Y. Miyanishi, Y. Takegawa, N. Miyamoto

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

Time evolutions of O 2p intensity during the first monolayer growth of dry oxides on Si(100)-(2×1) surface as obtained by real-time ultraviolet-photoelectron spectroscopy (UPS) shows two types of evolutions: Langmuir-Hishelwood type in the low-T/high-P region and a sigmoid-like type in the high-T/low-P region. Preoxidation experiments demonstrates that the former corresponds to the random-adsorption mode and the latter to the 2D-island growth mode. The obtained time evolutions for the two modes, not only the initial stage but also the one up to one monolayer coverage, are almost perfectly described with the autocatalytic reaction model developed by the authors. The physical background of the model is discussed to show that the coalescence of islands is properly involved in the model, which accounts for its ability.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Transition from random to island growth mode during Si(100)-(2×1) dry oxidation and its description with autocatalytic reaction model'. Together they form a unique fingerprint.

Cite this