Transient processes and structural transformations in Si x Ge 1-x layers during oxygen implantation and sputtering

D. Krüger, A. A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph Romanova

Research output: Contribution to journalArticlepeer-review


We analyze transient processes during oxygen bombardment and sputtering of epitaxial Si x Ge 1-x layers with different compositions (0 < x < 0.75). We show that a composition-dependent drop of the Ge + secondary ion yield extends the transient period as a function of bombardment conditions. By means of computer modeling we describe secondary ion emission kinetics and simulate the dynamics of structural and compositional changes, including the Ge + intensity drop. An interfacial transient period after crossing a Si/Si x Ge 1-x interface can be neglected, if the altered layer formation is completed within the Si cap layer. This allows reliable quantification of dopant spikes within a few nm to these interfaces.

Original languageEnglish
Pages (from-to)285-289
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2003 Jan 15


  • Oxygen
  • SIMS
  • SiGe
  • Sputtering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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