Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates

Yafeng Chen, Shula Chen, Takayuki Kiba, Chang Yong Lee, Cedric Thomas, Yi Chun Lai, Akio Higo, Seiji Samukawa, Akihiro Murayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study transient photoluminescence (PL) in In0.2Ga0.8N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered etching templates. A lateral averaged diameter of the ND was controlled to be 9 nm with a high sheet-density up to 2.6×1011 cm-2. Transient PL in the NDs was measured as a function of temperature and compared with that in the mother QWs. Thermal quenching of PL is strongly suppressed in the NDs, while the PL intensity in the QWs rapidly decreases with increasing temperature. A PL-decay time in the NDs is 0.1 ns at 6 K, which is significantly shorter than that of 3.5 ns in the QW. The temperature dependence of the PL decaying property shows that a radiative decay time of 0.1 ns in the NDs is almost constant for temperature, while a non-radiative one decreases with increasing temperature. This significantly faster and relatively temperature-insensitive radiative decay time can be attribute to the strong confinement due to the ND formation in addition to strain relaxation.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages636-637
Number of pages2
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Chen, Y., Chen, S., Kiba, T., Lee, C. Y., Thomas, C., Lai, Y. C., Higo, A., Samukawa, S., & Murayama, A. (2016). Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 636-637). [7751321] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751321