Abstract
We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 10438-10442 |
| Number of pages | 5 |
| Journal | Applied optics |
| Volume | 54 |
| Issue number | 35 |
| DOIs | |
| Publication status | Published - 2015 Dec 10 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering
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Chen, S., Ito, T., Asahara, A., Nakamae, H., Nakamura, T., Yoshita, M., Kim, C., Zhang, B., Yokoyama, H., Suemoto, T., & Akiyama, H. (2015). Transient gain analysis of gain-switched semiconductor lasers during pulse lasing. Applied optics, 54(35), 10438-10442. https://doi.org/10.1364/AO.54.010438