Transient gain analysis of gain-switched semiconductor lasers during pulse lasing

Shaoqiang Chen; Takashi Ito; Akifumi Asahara; Hidekazu Nakamae; Takahiro Nakamura; Masahiro Yoshita; Changsu Kim; Baoping Zhang; Hiroyuki Yokoyama; Tohru Suemoto; Hidefumi Akiyama

doi:10.1364/AO.54.010438

Transient gain analysis of gain-switched semiconductor lasers during pulse lasing

Shaoqiang Chen, Takashi Ito, Akifumi Asahara, Hidekazu Nakamae, Takahiro Nakamura, Masahiro Yoshita, Changsu Kim, Baoping Zhang, Hiroyuki Yokoyama, Tohru Suemoto, Hidefumi Akiyama

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.

Original language	English
Pages (from-to)	10438-10442
Number of pages	5
Journal	Applied optics
Volume	54
Issue number	35
DOIs	https://doi.org/10.1364/AO.54.010438
Publication status	Published - 2015 Dec 10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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@article{eb94b4ca7129491c82566823127ee3ec,

title = "Transient gain analysis of gain-switched semiconductor lasers during pulse lasing",

abstract = "We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers. ",

author = "Shaoqiang Chen and Takashi Ito and Akifumi Asahara and Hidekazu Nakamae and Takahiro Nakamura and Masahiro Yoshita and Changsu Kim and Baoping Zhang and Hiroyuki Yokoyama and Tohru Suemoto and Hidefumi Akiyama",

year = "2015",

month = dec,

day = "10",

doi = "10.1364/AO.54.010438",

language = "English",

volume = "54",

pages = "10438--10442",

journal = "Applied Optics",

issn = "0003-6935",

publisher = "The Optical Society",

number = "35",

}

TY - JOUR

T1 - Transient gain analysis of gain-switched semiconductor lasers during pulse lasing

AU - Chen, Shaoqiang

AU - Ito, Takashi

AU - Asahara, Akifumi

AU - Nakamae, Hidekazu

AU - Nakamura, Takahiro

AU - Yoshita, Masahiro

AU - Kim, Changsu

AU - Zhang, Baoping

AU - Yokoyama, Hiroyuki

AU - Suemoto, Tohru

AU - Akiyama, Hidefumi

PY - 2015/12/10

Y1 - 2015/12/10

N2 - We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.

AB - We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.

UR - http://www.scopus.com/inward/record.url?scp=85018776632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018776632&partnerID=8YFLogxK

U2 - 10.1364/AO.54.010438

DO - 10.1364/AO.54.010438

M3 - Article

C2 - 26836868

AN - SCOPUS:85018776632

VL - 54

SP - 10438

EP - 10442

JO - Applied Optics

JF - Applied Optics

SN - 0003-6935

IS - 35

ER -

Transient gain analysis of gain-switched semiconductor lasers during pulse lasing

Abstract

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