Transient gain analysis of gain-switched semiconductor lasers during pulse lasing

Shaoqiang Chen, Takashi Ito, Akifumi Asahara, Hidekazu Nakamae, Takahiro Nakamura, Masahiro Yoshita, Changsu Kim, Baoping Zhang, Hiroyuki Yokoyama, Tohru Suemoto, Hidefumi Akiyama

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Abstract

We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.

Original languageEnglish
Pages (from-to)10438-10442
Number of pages5
JournalApplied optics
Volume54
Issue number35
DOIs
Publication statusPublished - 2015 Dec 10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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    Chen, S., Ito, T., Asahara, A., Nakamae, H., Nakamura, T., Yoshita, M., Kim, C., Zhang, B., Yokoyama, H., Suemoto, T., & Akiyama, H. (2015). Transient gain analysis of gain-switched semiconductor lasers during pulse lasing. Applied optics, 54(35), 10438-10442. https://doi.org/10.1364/AO.54.010438