Transfer characteristic of IM3 relative phase for a GaAs FET amplifier

Noriharu Suematsu, Tomonori Shigematsu, Yoshitada Iyama, Osami Ishida

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

Measured transfer characteristic of relative phase of the third order intermodulation distortion (IM3) of a GaAs FET amplifier is described. The measurement system and method are also described. For drives in the weakly-nonlinear region, the measured relative phase of IM3 is equal to that of carriers, and is well agreed with the analysis result based on Volterra-series representation. For drives in the saturation region, the measured relative phase of IM3 versus the input power is quite larger than that of carriers relative phase. The measured results and the measurement method are useful for the design and adjustment of predistortion type linearizer for GaAs FET high power amplifiers.

Original languageEnglish
Pages (from-to)901-904
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 1997 Jun 81997 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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