Transfer characteristic of im% relative phase for a gaas fet amplifier

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The transfer characteristic of relative phase of the third-order intermodulation distortion (IM3) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IMa is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM3 versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IMs relative phase is caused by the generation of IMa due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.

Original languageEnglish
Pages (from-to)2509-2514
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume45
Issue number12 PART 2
DOIs
Publication statusPublished - 1997 Dec 1
Externally publishedYes

Keywords

  • Amplifier distortion
  • Intermodulation distortion
  • Microwave fet amplifiers
  • Microwave measurements
  • Volterra series

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Transfer characteristic of im% relative phase for a gaas fet amplifier'. Together they form a unique fingerprint.

Cite this