Toward the epitaxial growth of ferromagnetic γ'-Fe4N on Si(100) substrate by molecular beam epitaxy

Geun Hyoung Lee, Keito Ito, Takashi Suemasu

Research output: Contribution to journalArticlepeer-review

Abstract

γ'-Fe4N film was epitaxially grown on a SrTiO 3(001) substrate by molecular beam epitaxy using solid source Fe and nitrogen radical beam by electron cyclotron resonance plasma. Under the similar growth condition, we tried to grow γ'-Fe4N films epitaxially on a Si(100) substrate, because the lattice mismatch is smaller on Si(100) (1.3%) than that on SrTiO3(001) (3%). It was found from x-ray diffraction measurements that ε-Fe3N films were formed instead of γ'-Fe4N, differently from our prediction.

Original languageEnglish
Pages (from-to)193-195
Number of pages3
JournalPhysics Procedia
Volume11
DOIs
Publication statusPublished - 2011

Keywords

  • Magnetic material
  • Molecular beam epixty
  • Nitride

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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