Abstract
The growth of In2S3 and InS by vacuum evaporation of indium metal on the surface of molybdenite has been observed in the initial stage of film growth. By the increment of In2S3 particle size, InS was also produced. By the increase of the film thickness to more than 20 nm, indium crystal predominately grew. The topotactic relations among the substrate and sulfide are as follows: (0 0 0 1)MoS(2)∥(1 1 0)In(2)S(3), [1 0 1̄ ]MoS(2) ∥[1 1 1]In(2)S(3) or (0 0 0 1)MoS(2) ∥(1 1 0)In(2)S(3), [1 0 1̄ 0]MoS(2) ∥[1 0 0]In(2)S(3).
| Original language | English |
|---|---|
| Pages (from-to) | 259-264 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 218 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2000 Sep 15 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Kaito, C., Ito, A., Kimura, S., Kimura, Y., Saito, Y., & Nakada, T. (2000). Topotactical growth of indium sulfide by evaporation of metal onto molybdenite. Journal of Crystal Growth, 218(2), 259-264. https://doi.org/10.1016/S0022-0248(00)00575-3