TY - JOUR
T1 - Topotactic reductive synthesis of A-site cation-ordered perovskite YBaCo2Ox (x = 4.5-5.5) epitaxial thin films
AU - Katayama, Tsukasa
AU - Chikamatsu, Akira
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
N1 - Funding Information:
Acknowledgments This work was partially supported by Grants-in-Aid for Scientific Research (Grant Nos. 15H05424 and 14J10064) from the Japan Society for the Promotion of Science (JSPS), and the Leading Graduate Schools Program The Materials Education Program for the Future Leaders in Research, Industry, and Technology.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/4
Y1 - 2016/4
N2 - A-site cation-ordered perovskite YBaCo2Ox epitaxial films were synthesized by combining pulsed-laser deposition and topotactic reduction using CaH2. The oxygen contents (x) of the films could be controlled in a range of 4.5-5.5 by adjusting the reaction temperature. The c-axis length of the YBaCo2Ox films decreased with decreasing x when x ≥ 5.3 but drastically increased when x ∼ 4.5. In contrast, the in-plane lattice constants remained locked-in by the substrate after the reaction. The metal insulator transition observed in bulk YBaCo2O5.5 was substantially suppressed in the present film, likely because of the epitaxial strain effect. The resistivity of the films was significantly enhanced by changing the x value from ∼ 5.5 to ∼ 4.5, reflecting the distortion of the CoOx layers.
AB - A-site cation-ordered perovskite YBaCo2Ox epitaxial films were synthesized by combining pulsed-laser deposition and topotactic reduction using CaH2. The oxygen contents (x) of the films could be controlled in a range of 4.5-5.5 by adjusting the reaction temperature. The c-axis length of the YBaCo2Ox films decreased with decreasing x when x ≥ 5.3 but drastically increased when x ∼ 4.5. In contrast, the in-plane lattice constants remained locked-in by the substrate after the reaction. The metal insulator transition observed in bulk YBaCo2O5.5 was substantially suppressed in the present film, likely because of the epitaxial strain effect. The resistivity of the films was significantly enhanced by changing the x value from ∼ 5.5 to ∼ 4.5, reflecting the distortion of the CoOx layers.
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U2 - 10.7567/JJAP.55.04EJ05
DO - 10.7567/JJAP.55.04EJ05
M3 - Article
AN - SCOPUS:84963636409
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04EJ05
ER -